Time dependent dielectric breakdown and stress induced leakage current characteristics of 8Å EOT HfO2 N-MOSFETS

摘要

In this work we present the time dependent dielectric breakdown (TDDB) characteristics of LaO capped HfO2 layers with an equivalent oxide thickness of 8Å. The layers show maximum operating voltages in excess of 1V. Such high reliability can be attributed to very high Weibull slopes. We examine the origin of the high slopes by a detailed study of the evolution of the stress induced leakage current with time, temperature and stress voltage.